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  • 1) Fig 1. He+ exposed L-shaped ~10 nm patterns of the MAPDSA-co-ADSM resist.

  • 2) Fig 2. Imager of He+ exposed n-Car.

  • 3)Fig 3. 10 nm line pattern with 50 μC/cm2 a) overview b) high-resolution HIM images at 50 nm scale bar

  • 4) Fig 4. IIT Mandi logo printed by using PAS resist under EBL.

  • 5) Fig 5. SEM image of 20 nm lines features exhibited by the 2.0%-MAPDSA-co-MAPDST resist under HIBL.

  • 6) Fig 6. 20 nm line features and dots patterns exhibited by the 2.0%-MAPDSA-co-MAPDST resist under EUVL.

  • 7) Fig 7. 100 nm dots exhibited by the 2.0%-MAPDSA-co-MAPDST resist under EUVL.

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Resist Technology for VLSI application:

In today's world, semiconductor chips play a vital role in day to day life by making our life pleasurable, safer, and healthier. The radical improvements in integrated circuits (IC) performance stem primarily from the interconnection of millions of active and passive components such as logic, memory, input-output and power management modules on a single silicon chip. Semiconductor device manufacturers compete to offer cost effective devices that combine high performance and functionalities with low heat generation. This competition has resulted in a relentless drive to reduce the (IC) chip feature size. Reducing the device feature size boosts speed and improves the economics of manufacturing by allowing more transistors (often more than 50 million) to be placed on a single chip.

Read More ... Four faculties from different disciplines including science and engineering have teamed up and joined their hands together to take the challenges for the development of indigenous Photoresists, for dfferent lithography applications. The team is also working towards the commercialization of some of their newly developed Photoresist formulations for semiconductor industries.