Acceptance of US Patent - 2019
Photoacid Generators and Lithographic Resists Comprising the Same. Kenneth E. Gonsalves, Application No. 14/219/495


C4DFED - 2018
Centre for Design and Fabrication of Electronics Devices (C4DFED) Link to the Website.


IWNEBD - 2018 News
Link to the News.

Link to the News.

Link to the News.


IWNEBD - 2018
International Workshop on Nano/Micro 2d-3d Fabrication, Manufacturing of Electronic – Biomedical Devices & Applications from 31 October – 2 November 2018 Link to the Website.


Accepted Manuscript
1. Polarization Dependence in the Carbon K-edge Photofragmentation of MAPDST Photoresist: an Experimental and Theoretical Study C. Moura, G. K. Belmonte, M. Segala, K. E. Gonsalves and D. E. Weibel; Manuscript accepted at ACS J Physical Chemistry. DOI:10.1021/acs.jpcc.8b07288. Prof K. E. Gonsalves in collaboration with Dept of Chemical Physics, Institute of Chemistry, UFRGS, Porto Alegre, Brazil Funded by CNPq, CAPES, LNL Brazil

2. Ferrocene Bearing Non-ionic Poly-aryl Tosylates: Synthesis, Characterization and Electron Beam Lithography Applications Pulikanti Guruprasad Reddy, M. G. Moinuddin, Aneesh M. Joseph, Santu Nandi, Subrata Ghosh, Chullikkattil P. Pradeep, Satinder K. Sharma, and Kenneth E. Gonsalves; Manuscript accepted at Journal of photopolymer science and technology.

3. Enhanced mechanical properties of the high-resolution EUVLpatterns of hybrid photoresists containing hexafluoroantimonate ” Pawan Kumar, Pulikanti Guruprasad Reddy, Satinder K. Sharma, Subrata Ghosh, Chullikkattil P. Pradeep, Kenneth E. Gonsalves. Manuscript accepted at Microelectronic Engineering Journal.


Publications
EUV photofragmentation study of hybridnonchemically amplified resists containing antimony as an absorption enhancer” Cleverson Alves da Silva Moura, Guilherme Kretzmann Belmonte, Pulikanti Guruprasad Reddy, Kenneth E. Gonsalves and Daniel Eduardo Weibel. The paper has been published curently in RSC advance journal


Proceedings of SPIE
1. Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications. S. K. Sharma, P. G. Reddy, M. G. Moinuddin, S. Ghosh, C. P. Pradeep, et al.

2. Evaluation of high-resolution and sensitivity of n-CAR hybrid resist for sub-16nm or below technology node. S. K. Sharma, M. G. Moinuddin, P. G. Reddy, C. P. Pradeep, S. Ghosh, et al.


Invited Lectures
1. Prof. Kenneth E. Gonsalves delivered a plenary speech at SBPMat Brazil-MRS on “Extreme Ultraviolet (EUV) Next Generation Lithography: Noval Patterning materials- progress and challenges. 10th Sept. 2017 – 14th Sept 2017. Link

2. Prof. Kenneth E. Gonsalves gave an invited lecture on EUVL Resist Technology at “ Brazilian Center for Physical Research”. Link

3. Prof. Kenneth E. Gonsalves gave an invited lecture on VLSI Resist Technology at “ CEITECS.A’ Portoalegre/RS Brazil”. Link


New Articles
1. EUV photo-fragmentation and oxidation of a polyarylene - sulfonium resist: XPS and NEXAFS study. Guilherme Kretzmann Belmonte, Cleverson Alves da Silva Moura, Pulikanti Guruprasad Reddy, Kenneth E, Gonsalves and Daniel Eduardo Weibel, The article has been published currently in ''Journal of Photochemistry & Photobiology, A: Chemistry'' journal. DOI information: 10.1016/j.jphotochem.2018.06.005 (Joint publication with Dept of Chemistry Physical Chemistry Institute, UFRGS, Porto Alegre, Brazil. Project work performed at LNLS Campinas Brazil)